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| PD49PI/PD481PI PD49PI/PD481PI s Features 1. High sensitivity ( ISC >=3.5 A at E V = 100lx: PD481PI ) 2. Peak sensitivity wavelength matching with infrared LED ( p= 960nm: PD481PI ) ( p= 1000nm: PD49PI ) 3. Built-in visible light cut-off filter High Speed, High Sensitivity Photodiode s Outline Dimensions Detector center Black epoxy resin ( Visible light cut-off type ) 7.0 0.2 ( Unit : mm ) Rest of gate 0.4MAX. 7.6 0.2 0.3 ( Chip location ) 7.3 0.9 0.9 1.3MAX. 13.0 1.0 1.3MAX. 1 s Applications 1. Infrared remote controllers for TVs, VCRs, audio equipment and air conditioners, etc. 0.5 0.5 2 1.3 2.7 0.2 12 1.4 0.5 5.08 0.1 1 Anode 2 Cathode s Absolute Maximum Ratings Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol VR P Topr Tstg Tsol ( Ta = 25C ) Rating 32 150 - 25 to + 85 - 40 to + 100 260 Unit V mW C C C *For 10 seconds at the position of 2.3mm from the bottom face of resin package s Electro-optical Characteristics Parameter *2 ( Ta = 25C ) Symbol Conditions EV = 100lx EV = 100lx VR= 10V VR= 10V VR= 3V, f= 1MHz ISC T Id T Ct MIN. 2.4 3.5 910 TYP. 3 5 0.2 1 3.5 20 1 000 960 MAX. 30 5 50 1 010 Unit A % /C nA times/10C pF nm Short circuit current Short circuit current temperature coefficient Dark current Dark current temperature coefficient Terminal capacitance Peak sensitivity wavelength PD49PI PD481PI *2 PD49PI PD481PI P *2 E V : Illuminance by CIE standard light source A ( tungsten lamp ) " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. " PD49PI/PD481PI Fig .1 Power Dissipation vs. Ambient Temperature 200 Fig. 2 Spectral Sensitivity 100 90 T a = 25C Power dissipation P ( mW ) 80 150 Relative sensitivity ( % ) 70 60 50 40 30 20 10 0 - 25 0 25 50 75 85 100 Ambient temperature T a ( C ) 0 600 PD481Pl PD49Pl 100 50 700 800 900 1000 Wavelength ( nm ) 1100 1200 Fig. 3 Dark Current vs. Ambient Temperature 10 - 6 VR = 10V 10 - 7 Dark current I d ( A ) 10 - 8 10 - 9 Fig. 4 Dark Current vs. Reverse Voltage 10 -7 5 2 T a = 25C 10 -8 Dark current I d ( A ) 5 2 10 -9 5 2 10 - 10 10 - 11 10 - 12 10 -10 5 2 - 25 0 25 50 75 Ambient temperature T a ( C ) 100 10 -11 5 10- 2 2 5 10-1 2 5 10 2 512 Reverse voltage VR ( V ) 5 Fig. 5 Terminal Capacitance vs. Reverse Voltage 60 f = 1MHz Ta = 25C Terminal capacitance C t ( pF ) 50 Fig. 6 Relative Output vs. Ambient Temperature (Emitter : GL537/GL538,Detector : PD49PI/PD481PI ) 160 140 120 ( Test circuit ) GL537 PD49Pl GL538 PD481Pl A 40 Relative output ( % ) 100 80 60 40 30 20 10 20 0 0.05 0.1 0.2 0 - 25 Distance between infrared light emitting diode and photodiode shall be fixed I sc = 100 A at I F = 20mA and T a = 25C 0 25 50 75 100 0.5 1 2 5 10 20 50 Reverse voltage VR ( V ) Ambient temperature T a ( C ) PD49PI/PD481PI Fig. 7 Sensitivity Diagram -20 -10 0 100 - 30 Relative radiant intensity ( % ) 80 + 30 ( Ta = 25C ) +10 +20 Fig. 8 Relative Output vs. Distance ( Emitter:GL537/GL538 Detector : PD49PI/ PD481PI) 100 GL538 Relative output ( % ) - 40 60 10 GL537 + 40 - 50 - 60 - 70 - 80 - 90 40 + 50 + 60 1 20 + 70 + 80 + 90 I F = 20mA T a = 25C 10 -3 10 - 2 10 - 1 Distance between emitter and detector d ( mm ) 0 Angular displacement 0.1 10 -4 Fig. 9 Responce Time vs. Load Resistance 10 2 5 2 V R = 10V T a = 25C Test Circuit for Responce Time 10 Responce time t r , t f ( s ) 5 2 Laser diode IOUT = 0.1mA PD49PI/ PD481PI + Output RL Input 10 0 5 2 10V Output 90% 10% tr tf 10 - 1 5 2 Pulse generator 10 2 5 10 2 2 5 10 3 2 5 10 4 2 Load resistance R L ( ) 5 10 5 10 - 2 q Please refer to the chapter " Precautions for Use." |
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